Design of multilevel pyramidically wound symmetric inductor for CMOS RFIC’s
نویسنده
چکیده
This paper presents the design of a multilevel pyramidically wound symmetric (MPS) inductor structure. Being multilevel, the MPS inductor achieves high inductance to area ratio and hence occupies smaller silicon area. The symmetric inductor is realized by winding the metal trace of the spiral coil down and up in a pyramidal manner exploiting the multilevel VLSI interconnects technology. Closed form expressions are also developed to estimate the self resonating frequency (fres) of the MPS inductor and results are compared to two layer conventional symmetric and asymmetric stack. The estimation is also validated with full wave electromagnetic simulation. The performance of various MPS inductors of different metal width, metal offsets and outer diameter is demonstrated. For an inductance of 8 nH, the MPS inductor reduces the area by 65–95% over conventional planar symmetric inductors and 71–94% over its equivalent pair of asymmetric planar inductors. The performance is also compared to other symmetric inductors reported in literature. With MPS inductor, the cost and size of RF IC’s will be reduced significantly.
منابع مشابه
New Coupled-Inductor Based Multilevel Inverter with Extension Capability
Multilevel inverters have been developed due to limitations of the conventional two-level voltage source inverters (VSIs). Most of the topologies of multilevel inverters that have been presented in the literature are based on the sharing of the rated voltage between the switches so that the switches with lower voltage ratings can be used. In these topologies, the current rating of all of the sw...
متن کاملA Broadband Low Power CMOS LNA for 3.1–10.6 GHz UWB Receivers
A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obt...
متن کاملA 1.8 V RF CMOS Active Inductor with 0.18 um CMOS Technology
A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Induct...
متن کاملUltra-Low Power, Low Phase Noise 10 GHz LC VCO in the Subthreshold Regime
A new design for an ultra-low power, low phase noise differential 10 GHz LC voltage-controlled oscillator (VCO) which is biased in the subthreshold regime, is presented in the 0.18 μm CMOS process, for the first time. The designed circuit topology is an NMOS only cross-coupled LC-tank VCO which has an extra symmetric centre tapped inductor between the source ends of the cross-coupled transistor...
متن کامل